STB12NM50ND
MOSFET N-CH 500V 11A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB12NM50ND is an N-Channel Power MOSFET from the FDmesh™ II series. This device offers a 500V drain-source breakdown voltage and a continuous drain current capability of 11A at 25°C (Tc). Featuring a low on-resistance of 380mOhm maximum at 5.5A and 10V Vgs, it dissipates up to 100W (Tc). The MOSFET is housed in a TO-263 (D2PAK) surface-mount package and operates at a junction temperature up to 150°C. Key electrical parameters include a gate charge of 30 nC (max) at 10V Vgs and an input capacitance of 850 pF (max) at 50V Vds. This component is suitable for applications in power supply, lighting, and industrial motor control.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 50 V |
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