STB12NM50N
MOSFET N-CH 500V 11A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB12NM50N is an N-Channel Power MOSFET from the MDmesh™ II series. This component features a 500V drain-to-source voltage (Vdss) and a continuous drain current of 11A (Tc) at 25°C, with a maximum power dissipation of 100W (Tc). The on-resistance (Rds On) is specified at a maximum of 380mOhm at 5.5A and 10V gate drive. Key parameters include input capacitance (Ciss) of 940pF at 50V and gate charge (Qg) of 30nC at 10V. The device operates up to 150°C (TJ) and is packaged in a surface-mount D2PAK (TO-263-3, D2PAK) suitable for tape and reel packaging. This MOSFET is utilized in applications such as power supplies, industrial automation, and consumer electronics.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 940 pF @ 50 V |
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