STB12NM50FDT4
MOSFET N-CH 500V 12A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB12NM50FDT4 is an N-Channel Power MOSFET from the FDmesh™ series. This component features a maximum drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 12A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 400mOhm maximum at 6A, 10V. It is packaged in a TO-263-3, D2PAK (2 Leads + Tab) surface mount configuration, supplied on tape and reel. With a maximum power dissipation of 160W (Tc), the STB12NM50FDT4 is suitable for applications requiring efficient power switching. Key electrical specifications include a gate charge (Qg) of 12 nC at 10V and input capacitance (Ciss) of 1000 pF at 25V. This MOSFET is utilized in power supply units, motor control, and lighting applications.
Additional Information
Series: FDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 25 V |
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