STB120N10F4
MOSFET N-CH 100V D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB120N10F4 is a N-channel Power MOSFET designed for high-performance applications. This component features a continuous drain current rating of 120A (Tc) and a maximum power dissipation of 300W (Tc). It operates with a gate-source voltage (Vgs) up to +/-20V and requires a drive voltage of 10V for its specified Rds(on). The STB120N10F4 is housed in a TO-263 (D2PAK) surface mount package, facilitating efficient thermal management and automated assembly. This MOSFET is suitable for demanding applications across automotive, industrial, and power supply sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | - |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
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