STB11NM60T4
MOSFET N-CH 650V 11A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB11NM60T4 is a 650V N-Channel Power MOSFET from the MDmesh™ series, packaged in a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB. This device offers a continuous drain current of 11A (Tc) at 25°C and a maximum power dissipation of 160W (Tc). Featuring a low on-resistance of 450mOhm at 5.5A and 10V Vgs, this MOSFET is designed for efficient power switching applications. Key parameters include a Vgs(th) of 5V @ 250µA, a gate charge (Qg) of 30 nC @ 10V, and an input capacitance (Ciss) of 1000 pF @ 25V. The STB11NM60T4 supports a maximum gate-source voltage of ±30V and is suitable for surface mounting. This component finds application in power supply units, lighting, and industrial power control. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 25 V |
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