STB11NM60N-1
MOSFET N-CH 600V 10A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STB11NM60N-1 is an N-Channel Power MOSFET from the MDmesh™ II series. This component features a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 10A at 25°C, with a maximum power dissipation of 90W (Tc). The device exhibits a low on-resistance (Rds On) of 450mOhm at 5A, 10V and a gate charge (Qg) of 31 nC at 10V. Designed for through-hole mounting, it is housed in an I2PAK package (TO-262-3 Long Leads, I2PAK, TO-262AA). Key parameters include a gate-source voltage (Vgs) range of ±25V and a threshold voltage (Vgs(th)) of 4V at 250µA. This MOSFET is suitable for applications in power supplies, industrial motor control, and lighting.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 50 V |
Request a Quote
Clients Also Buy
STD13NM60N
MOSFET N-CH 600V 11A DPAK
STD14NM50NAG
MOSFET N-CH 500V 12A DPAK
STD8NM50N
MOSFET N-CH 500V 5A DPAK
