STB11NM60-1
MOSFET N-CH 650V 11A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics MDmesh™ series STB11NM60-1 is a 650 V N-Channel Power MOSFET with a continuous drain current rating of 11A (Tc) and a maximum power dissipation of 160W (Tc). This device features a low on-resistance of 450mOhm at 5.5A and 10V Vgs, with a typical gate charge of 30 nC at 10 V. The STB11NM60-1 is housed in an I2PAK (TO-262-3 Long Leads) package for through-hole mounting and operates across a wide temperature range of -65°C to 150°C (TJ). Its robust design makes it suitable for applications in power factor correction (PFC), switch-mode power supplies (SMPS), and lighting applications.
Additional Information
Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 25 V |
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