STB11N52K3
MOSFET N-CH 525V 10A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB11N52K3 is a SuperMESH3™ N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a maximum drain-source voltage (Vdss) of 525V and a continuous drain current (Id) of 10A at 25°C case temperature, with a power dissipation capability of 125W (Tc). The low on-resistance (Rds On) of 510 mOhm at 5A and 10V gate drive ensures minimal conduction losses. Key parameters include a gate charge (Qg) of 51 nC at 10V and input capacitance (Ciss) of 1400 pF at 50V. The STB11N52K3 is housed in a surface-mount TO-263-3, D2PAK package for efficient thermal management and automated assembly. Its robust performance characteristics make it suitable for use in power supplies, lighting, and industrial motor control systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 510mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 525 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 50 V |
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