STB10NK60ZT4
MOSFET N-CH 600V 10A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB10NK60ZT4 SuperMESH™ series N-Channel Power MOSFET. This device features a 600V Drain-Source Voltage (Vdss) and a continuous drain current capability of 10A at 25°C (Tc). The Rds(on) is specified at a maximum of 750mOhm at 4.5A and 10V gate drive. Key parameters include a gate charge (Qg) of 70 nC (max) at 10V and input capacitance (Ciss) of 1370 pF (max) at 25V. Designed for surface mounting, it is supplied in the TO-263-3, D2PAK package. The power dissipation is rated at 115W (Tc). Operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in power supplies, lighting, and motor control.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 115W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1370 pF @ 25 V |
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