STB10NK60Z-1
MOSFET N-CH 600V 10A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB10NK60Z-1 is a SuperMESH™ series N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 10A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 750mOhm maximum at 4.5A and 10V gate drive, ensuring minimal conduction losses. With a maximum power dissipation of 115W (Tc), it supports demanding power delivery. The STB10NK60Z-1 utilizes a standard MOSFET technology, offering a gate charge (Qg) of 70 nC maximum at 10V and input capacitance (Ciss) of 1370 pF maximum at 25V. It is housed in an I2PAK package (TO-262-3 Long Leads, TO-262AA), suitable for through-hole mounting. This MOSFET is widely employed in power supplies, industrial automation, and lighting control systems. The operating temperature range is -55°C to 150°C (TJ), with a maximum gate-source voltage (Vgs) of ±30V.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 115W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1370 pF @ 25 V |
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