STB10N65K3
MOSFET N-CH 650V 10A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB10N65K3 is a SuperMESH3™ N-channel Power MOSFET designed for high voltage applications. This component features a Drain-Source Voltage (Vdss) of 650V and a continuous Drain Current (Id) of 10A at 25°C. The device offers a low On-Resistance (Rds On) of 1 Ohm maximum at 3.6A and 10V Vgs, with a Gate Charge (Qg) of 42 nC maximum at 10V. Input capacitance (Ciss) is 1180 pF maximum at 25V. The STB10N65K3 is packaged in a TO-263-3, D2PAK (2 Leads + Tab) for surface mounting, with a maximum power dissipation of 150W at 25°C. Operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in power supplies, industrial applications, and consumer electronics.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 3.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1180 pF @ 25 V |
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