STB100NH02LT4
MOSFET N-CH 24V 60A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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This STMicroelectronics STripFET™ III series N-Channel Power MOSFET, part number STB100NH02LT4, offers robust performance for demanding applications. It features a 24V drain-source voltage (Vds) and a continuous drain current (Id) capability of 60A at 25°C (Tc), with a maximum power dissipation of 100W (Tc). The device exhibits a low on-resistance (Rds On) of 6mOhm at 30A and 10V, facilitated by its N-Channel Metal Oxide technology.
Key electrical parameters include a gate charge (Qg) of 64 nC at 10V and an input capacitance (Ciss) of 2850 pF at 15V. The STB100NH02LT4 is packaged in a surface-mount D2PAK (TO-263-3, D2PAK (2 Leads + Tab), TO-263AB) and is supplied in Tape & Reel (TR). It operates across a wide temperature range of -55°C to 175°C (TJ) and supports gate-source voltages (Vgs) up to ±20V, with a threshold voltage (Vgs(th)) of 1.8V at 250µA. This component is prevalent in power supply, automotive, and industrial automation sectors.
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2850 pF @ 15 V |
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