STB100NF03L-03T4
MOSFET N-CH 30V 100A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STripFET™ III N-Channel Power MOSFET, part number STB100NF03L-03T4, offers a 30V drain-source voltage and a continuous drain current capability of 100A at 25°C (Tc). This surface mount device features an extremely low on-resistance of 3.2mOhm maximum at 50A and 10V, coupled with a power dissipation of 300W (Tc). The STB100NF03L-03T4 is housed in a TO-263-3, D2PAK package and utilizes advanced STripFET™ III technology for enhanced performance. Key electrical specifications include a gate charge of 88 nC maximum at 5V and input capacitance of 6200 pF maximum at 25V. The operating temperature range is -55°C to 175°C (TJ). This component is widely used in automotive, industrial power supplies, and high-current switching applications.
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 88 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6200 pF @ 25 V |
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