STB100NF03L-03-1
MOSFET N-CH 30V 100A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STB100NF03L-03-1 is an N-Channel Power MOSFET from the STripFET™ III series. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 100A at 25°C (Tc), with a maximum power dissipation of 300W (Tc). The low on-resistance (Rds On) of 3.2mOhm at 50A and 10V gate-source voltage (Vgs) is achieved with a 4.5V to 10V drive voltage range. Key parameters include a gate charge (Qg) of 88 nC at 5V and input capacitance (Ciss) of 6200 pF at 25V. The device operates reliably across a wide temperature range of -55°C to 175°C (TJ) and is housed in an I2PAK (TO-262-3 Long Leads, TO-262AA) package suitable for through-hole mounting. This component is utilized in various industrial applications, including power supply units and motor control systems.
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 88 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6200 pF @ 25 V |
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