STB100N6F7
MOSFET N-CH 60V 100A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB100N6F7 is an N-channel STripFET™ F7 series Power MOSFET designed for high-efficiency power switching applications. This device features a 60 V drain-source voltage (Vdss) and offers a continuous drain current (Id) of 100 A at 25°C (Tc). With a low on-resistance (Rds On) of 5.6 mOhm maximum at 50 A and 10 V, it minimizes conduction losses. The MOSFET is packaged in a TO-263 (D2PAK) surface-mount package, suitable for automated assembly. Key electrical characteristics include a gate charge (Qg) of 30 nC maximum at 10 V and an input capacitance (Ciss) of 1980 pF maximum at 25 V. This component is engineered for demanding applications across various industries including automotive, industrial power supplies, and high-power motor control. It operates within a temperature range of -55°C to 175°C (TJ) and supports a maximum power dissipation of 125 W (Tc).
Additional Information
Series: STripFET™ F7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1980 pF @ 25 V |
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