STB100N10F7
MOSFET N-CH 100V 80A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB100N10F7 is an N-Channel Power MOSFET from the DeepGATE™ and STripFET™ VII series. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 80A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 8mOhm at 40A and 10V gate drive. It supports a maximum gate-source voltage (Vgs) of ±20V and has a threshold voltage (Vgs(th)) of 4.5V at 250µA. Key parameters include input capacitance (Ciss) of 4369pF at 50V and gate charge (Qg) of 61nC at 10V. The STB100N10F7 is packaged in a TO-263-3 (D2PAK) surface-mount package, designed for efficient thermal management with a maximum power dissipation of 150W (Tc). Operating temperature range is -55°C to 175°C (TJ). This component is suitable for applications in automotive, industrial power control, and high-current switching. It is supplied in Tape & Reel packaging.
Additional Information
Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4369 pF @ 50 V |
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