SCTWA90N65G2V-4
TRANS SJT N-CH 650V 119A HIP247Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics SCTWA90N65G2V-4 is a high-performance N-Channel SiCFET designed for demanding power applications. This device features a 650 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 119 A at 25°C with a maximum power dissipation of 565 W at the same temperature. The low on-resistance of 24 mOhm at 50 A and 18 V (Id, Vgs) minimizes conduction losses. Key parameters include a gate charge (Qg) of 157 nC at 18 V and an input capacitance (Ciss) of 3380 pF at 400 V. The SCTWA90N65G2V-4 utilizes the TO-247-3 package with HiP247™ long leads for robust thermal management and mounting via through-hole. It operates across a wide temperature range from -55°C to 200°C (TJ). This component is suitable for use in electric vehicle charging, industrial power supplies, and solar inverters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 119A (Tc) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 50A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 565W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | HiP247™ Long Leads |
| Vgs (Max) | +22V, -10V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 157 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3380 pF @ 400 V |
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