SCTWA90N65G2V
SILICON CARBIDE POWER MOSFET 650Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics' SCTWA90N65G2V is an N-Channel Silicon Carbide Power MOSFET designed for high-performance applications. This device features a drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 119A at 25°C (Tc). With a maximum power dissipation of 565W (Tc), it offers robust thermal management. The Rds On (Max) is specified at 24mOhm at 50A and 18V gate drive. Key parameters include a typical gate charge (Qg) of 157 nC at 18V and input capacitance (Ciss) of 3380 pF at 400V. The device operates across an extended temperature range of -55°C to 200°C (TJ). Packaged in a TO-247-3 with long leads, the SCTWA90N65G2V is suitable for through-hole mounting. This SiCFET technology is commonly utilized in electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 119A (Tc) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 50A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 565W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-247 Long Leads |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -10V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 157 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3380 pF @ 400 V |
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