SCTWA60N120G2-4
SILICON CARBIDE POWER MOSFET 120Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics SCTWA60N120G2-4 is a high-performance N-Channel Silicon Carbide (SiC) MOSFET designed for demanding power applications. This device features a drain-source voltage (Vdss) of 1200V and offers a continuous drain current (Id) of 60A at 25°C (Tc), with a maximum power dissipation of 388W (Tc). The low on-resistance (Rds On) of 52mOhm is specified at 30A and 18V gate-source voltage. Key parameters include a maximum gate charge (Qg) of 94nC at 18V and input capacitance (Ciss) of 1969pF at 800V. Operating across a wide temperature range from -55°C to 200°C (TJ), this MOSFET is housed in a TO-247-4 package with through-hole mounting. The SCTWA60N120G2-4 is suitable for use in electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 30A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 388W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-247-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1969 pF @ 800 V |
Request a Quote
Clients Also Buy
STP80NF10
MOSFET N-CH 100V 80A TO220AB
STP7LN80K5
MOSFET N-CH 800V 5A TO220
STP19NM50N
MOSFET N-CH 500V 14A TO220AB
