SCTWA50N120
SICFET N-CH 1200V 65A HIP247Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics N-Channel SiCFET, part number SCTWA50N120, offers a 1200V drain-source breakdown voltage and 65A continuous drain current at 25°C. This device features low on-resistance of 69mOhm maximum at 40A and 20V gate-source voltage. Key parameters include a maximum gate charge of 122nC and input capacitance of 1900pF. Designed for high-temperature operation up to 200°C (TJ), it is housed in a through-hole HiP247™ package, suitable for demanding applications in power conversion and industrial motor control. The maximum power dissipation is rated at 318W (Tc).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Rds On (Max) @ Id, Vgs | 69mOhm @ 40A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 318W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | HiP247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 122 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 400 V |
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