SCTWA40N12G24AG
TO247-4Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics N-Channel Power MOSFET, part number SCTWA40N12G24AG, is a high-performance device designed for demanding applications. This MOSFET features a Drain-Source Voltage (Vdss) of 1200 V and a continuous Drain Current (Id) of 33A (Tc) at 25°C. The device offers a maximum On-Resistance (Rds On) of 105mOhm at 20A and 18V gate drive, with a maximum gate charge (Qg) of 63 nC at 18V. It is housed in a TO-247-4 through-hole package, providing a robust thermal solution with a maximum power dissipation of 290W (Tc). The operating junction temperature range is -55°C to 200°C. This component is qualified to AEC-Q101 and is suitable for automotive applications. The input capacitance (Ciss) is a maximum of 1230 pF at 800 V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 20A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 290W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-247-4 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1230 pF @ 800 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
STP80NF10
MOSFET N-CH 100V 80A TO220AB
STL12N65M2
MOSFET N-CH 650V 5A POWERFLAT HV
STP270N04
MOSFET N-CH 40V 120A TO220AB
