SCTWA40N120G2V
DISCRETEManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics N-Channel MOSFET, part number SCTWA40N120G2V, is a high-performance power device designed for demanding applications. This Through Hole component features a 1200 V drain-source voltage (Vdss) and a continuous drain current (Id) of 36 A at 25°C (Tc). With a maximum power dissipation of 278 W (Tc) and a low on-resistance (Rds On) of 100 mOhm at 20 A and 18 V, it offers efficient power handling. The device operates within a temperature range of -55°C to 200°C (TJ) and utilizes advanced MOSFET technology. Key characteristics include a gate charge (Qg) of 61 nC at 18 V and input capacitance (Ciss) of 1233 pF at 800 V. The SCTWA40N120G2V is supplied in a TO-247-3 long leads package and is suitable for use in industrial power supplies, renewable energy systems, and electric vehicle charging infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 278W (Tc) |
| Vgs(th) (Max) @ Id | 4.9V @ 1mA |
| Supplier Device Package | TO-247 Long Leads |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +18V, -5V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1233 pF @ 800 V |
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