SCTWA35N65G2V-4
DISCRETEManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics N-Channel Power MOSFET, part number SCTWA35N65G2V-4, offers a 650 V drain-source voltage and 45 A continuous drain current at 25°C (Tc). This through-hole device features a maximum power dissipation of 240 W (Tc) and a low on-resistance of 67 mOhm at 20 A, 20 V. With a gate charge of 73 nC (max) at 20 V and input capacitance of 1370 pF (max) at 400 V, it is suitable for demanding applications. The TO-247-4 package and operating temperature range of -55°C to 200°C (TJ) make it a robust solution for power conversion systems in industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 67mOhm @ 20A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 240W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-247-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V |
| Vgs (Max) | +18V, -5V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1370 pF @ 400 V |
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