SCTWA35N65G2V
TRANS SJT N-CH 650V 45A TO247Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics SCTWA35N65G2V is a 650V N-Channel Silicon Carbide (SiC) FET designed for high-power applications. This device features a continuous drain current (Id) of 45A at 25°C and a maximum power dissipation of 208W at the same temperature. With a low on-resistance (Rds On) of 72mOhm at 20A and 20V, it offers efficient switching performance. The SCTWA35N65G2V has a gate charge (Qg) of 73 nC and input capacitance (Ciss) of 73000 pF at 400V. It is housed in a TO-247-3 package with long leads, suitable for through-hole mounting. Operating across a wide temperature range from -55°C to 175°C, this FET is utilized in industries such as electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 72mOhm @ 20A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 3.2V @ 1mA |
| Supplier Device Package | TO-247 Long Leads |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V |
| Vgs (Max) | +20V, -5V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 73000 pF @ 400 V |
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