SCTWA20N120
IC POWER MOSFET 1200V HIP247Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 1200 V 20A (Tc) 175W (Tc) Through Hole HiP247™ Long Leads
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 239mOhm @ 10A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 175W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA (Typ) |
| Supplier Device Package | HiP247™ Long Leads |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 400 V |
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