SCTWA10N120
IC POWER MOSFET 1200V HIP247Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics SCTWA10N120 is a high-performance N-Channel Silicon Carbide MOSFET designed for demanding power applications. This device features a Drain-Source Voltage (Vdss) of 1200V and a continuous drain current (Id) of 12A at 25°C (Tc). With a maximum power dissipation of 110W (Tc) and a low on-resistance of 690mOhm at 6A and 20V, it is optimized for efficiency. The SCTWA10N120 has a gate charge (Qg) of 21 nC at 20V and input capacitance (Ciss) of 300 pF at 1000V. Operating within a junction temperature range of -55°C to 200°C, it is housed in a TO-247-3 package with HiP247™ Long Leads for robust thermal management and ease of mounting via the through-hole method. Typical applications include electric vehicle charging, industrial power supplies, and solar inverters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 690mOhm @ 6A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA (Typ) |
| Supplier Device Package | HiP247™ Long Leads |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 1000 V |
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