SCTW90N65G2V
SICFET N-CH 650V 90A HIP247Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics SiCFET N-Channel MOSFET, part number SCTW90N65G2V, offers a 650V drain-source voltage and 90A continuous drain current at 25°C (Tc). This device features a maximum on-resistance of 25mOhm at 50A and 18V Vgs, with a gate charge of 157 nC at 18V. The input capacitance (Ciss) is 3300 pF at 400V. Designed for high-power applications, it has a maximum power dissipation of 390W (Tc) and operates across a temperature range of -55°C to 200°C (TJ). The SCTW90N65G2V is housed in a HiP247™ package with a through-hole mounting type. This component is suited for demanding applications across industrial power, electric vehicle powertrains, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 50A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 390W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | HiP247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -10V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 157 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3300 pF @ 400 V |
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