SCTW70N120G2V
TRANS SJT N-CH 1200V 91A HIP247Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics N-Channel SiCFET, part number SCTW70N120G2V, is a 1200 V device with a continuous drain current capability of 91 A at 25°C (Tc). This through-hole component, housed in the HiP247™ package, offers a maximum power dissipation of 547 W (Tc) and a low on-resistance of 30 mOhm at 50 A and 18 V. Key electrical characteristics include a gate charge (Qg) of 150 nC at 18 V and input capacitance (Ciss) of 3540 pF at 800 V. The device supports a gate-source voltage range of +22 V to -10 V and a threshold voltage (Vgs(th)) of 4.9 V at 1 mA. Operating temperature range is -55°C to 200°C (TJ). This component finds application in high-power switching applications within industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 91A (Tc) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 50A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 547W (Tc) |
| Vgs(th) (Max) @ Id | 4.9V @ 1mA |
| Supplier Device Package | HiP247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3540 pF @ 800 V |
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