SCTW60N120G2
DISCRETEManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics N-Channel Power MOSFET, part number SCTW60N120G2, is a high-performance discrete component designed for demanding applications. This device features a drain-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 60 A at 25°C, with a maximum power dissipation of 389 W (Tc). The Rds On is specified at a maximum of 52 mOhm at 30 A and 18 V. Key parameters include gate charge (Qg) of 94 nC at 8 V and input capacitance (Ciss) of 1969 pF at 800 V. Operating temperature range is -55°C to 200°C (TJ). The SCTW60N120G2 utilizes advanced MOSFET technology and is supplied in a Through Hole mounting configuration within a HiP247™ package. This component is suitable for power conversion, industrial motor control, and electric vehicle applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 30A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 389W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | HiP247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +18V, -5V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1969 pF @ 800 V |
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