SCTW40N120G2VAG
SICFET N-CH 1200V 33A HIP247Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics SiCFET N-Channel power MOSFET, part number SCTW40N120G2VAG, is designed for high-performance applications. This device offers a 1200 V drain-source voltage and a continuous drain current of 33 A at 25°C (Tc), dissipating up to 290 W (Tc). Featuring a low on-resistance of 105 mOhm maximum at 20 A and 18 V gate drive, it utilizes Silicon Carbide technology for enhanced efficiency. The SCTW40N120G2VAG is housed in a TO-247-3 package, specifically the HiP247™ footprint, for through-hole mounting. With a maximum gate charge (Qg) of 63 nC at 18 V and input capacitance (Ciss) of 1230 pF at 800 V, this component is qualified to AEC-Q101, making it suitable for automotive applications. The operating temperature range is -55°C to 200°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 20A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 290W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | HiP247™ |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1230 pF @ 800 V |
| Qualification | AEC-Q101 |
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