SCTW40N120G2V
SILICON CARBIDE POWER MOSFET 120Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics SiCFET N-Channel MOSFET, part number SCTW40N120G2V, offers a 1200 V drain-source voltage and 36 A continuous drain current at 25°C. This through-hole component features a low on-resistance of 100 mOhm maximum at 20 A and 18 V gate-source voltage. Utilizing Silicon Carbide technology, it boasts a maximum power dissipation of 278 W at the case temperature and an extended operating temperature range of -55°C to 200°C. The device is supplied in a HiP247™ package and is suitable for applications in power factor correction, electric vehicle charging, and industrial motor drives. Key parameters include a gate charge of 61 nC maximum at 18 V and input capacitance of 1233 pF maximum at 800 V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 278W (Tc) |
| Vgs(th) (Max) @ Id | 4.9V @ 1mA |
| Supplier Device Package | HiP247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1233 pF @ 800 V |
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