SCTW35N65G2VAG
SICFET N-CH 650V 45A HIP247Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics SiC N-Channel FET, part number SCTW35N65G2VAG, offers a robust solution for high-power applications. This device boasts a 650V drain-source voltage and a continuous drain current capability of 45A at 25°C (Tc), with a maximum power dissipation of 240W (Tc). Its low on-resistance is specified at a maximum of 67mOhm at 20A, 20V. The SiC technology enables efficient operation across a wide temperature range of -55°C to 200°C (TJ). Featuring a HiP247™ package for thermal management, this component is ideal for automotive power systems, electric vehicle charging, and industrial power supplies. Additional specifications include a gate charge of 73 nC at 20V and input capacitance of 1370 pF at 400V. The device is AEC-Q101 qualified.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 67mOhm @ 20A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 240W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | HiP247™ |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V |
| Vgs (Max) | +22V, -10V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1370 pF @ 400 V |
| Qualification | AEC-Q101 |
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