SCTW100N65G2AG
SICFET N-CH 650V 100A HIP247Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics SCTW100N65G2AG is a 650V N-Channel SiCFET designed for high-power applications. This device features a continuous drain current (Id) of 100A at 25°C (Tc) and a maximum power dissipation of 420W (Tc). With a low on-resistance (Rds On) of 26mOhm at 50A and 18V, it offers efficient switching performance. The input capacitance (Ciss) is 3315pF at 520V, and gate charge (Qg) is 162nC at 18V. This component operates within a temperature range of -55°C to 200°C (TJ). The SCTW100N65G2AG is presented in a through-hole HiP247™ package and is qualified to AEC-Q101 standards, making it suitable for automotive and industrial power conversion systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 50A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 420W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 5mA |
| Supplier Device Package | HiP247™ |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -10V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 162 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3315 pF @ 520 V |
| Qualification | AEC-Q101 |
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