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SCTL90N65G2V

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SCTL90N65G2V

SILICON CARBIDE POWER MOSFET 650

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics SCTL90N65G2V is a 650V N-Channel Silicon Carbide Power MOSFET designed for high-efficiency power conversion applications. This device features a low Rds(on) of 24mOhm at 40A and 18V, coupled with a continuous drain current capability of 40A (Tc) and a maximum power dissipation of 935W (Tc). The SCTL90N65G2V utilizes SiCFET technology, offering superior thermal performance and switching speed compared to traditional silicon MOSFETs. Key electrical parameters include a Vgs(th) of 5V @ 1mA, a gate charge (Qg) of 157 nC @ 18V, and an input capacitance (Ciss) of 3380 pF @ 400V. The MOSFET supports a gate-source voltage range of +22V to -10V. This component is housed in an 8-PowerVDFN package, specifically the PowerFlat™ (8x8) HV variant, suitable for surface mounting. It operates across a wide temperature range of -55°C to 175°C (TJ). This device is commonly found in demanding sectors such as electric vehicle charging, industrial power supplies, and renewable energy systems. The SCTL90N65G2V is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 45 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Rds On (Max) @ Id, Vgs24mOhm @ 40A, 18V
FET Feature-
Power Dissipation (Max)935W (Tc)
Vgs(th) (Max) @ Id5V @ 1mA
Supplier Device PackagePowerFlat™ (8x8) HV
Drive Voltage (Max Rds On, Min Rds On)18V
Vgs (Max)+22V, -10V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs157 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds3380 pF @ 400 V

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