SCTL35N65G2V
TRANS SJT N-CH 650V PWRFLAT HVManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics SCTL35N65G2V is an N-Channel Silicon Carbide FET with a drain-source breakdown voltage of 650V. This device offers a continuous drain current of 40A at 25°C (Tc) and a maximum power dissipation of 417W (Tc). The on-resistance (Rds On) is 67mOhm at 20A, 20V. Featuring a low gate charge (Qg) of 73 nC at 20V and input capacitance (Ciss) of 1370 pF at 400V, this FET is designed for efficient high-voltage switching applications. The gate-source voltage (Vgs) limits are +22V and -10V, with a threshold voltage (Vgs(th)) of 5V at 1mA. Packaged in an 8-PowerVDFN (PowerFlat™ 8x8 HV) and supplied on tape and reel, the SCTL35N65G2V is suitable for surface mounting and operates across a wide temperature range of -55°C to 175°C (TJ). This component finds application in power factor correction, electric vehicle charging, and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 45 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 67mOhm @ 20A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 417W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | PowerFlat™ (8x8) HV |
| Vgs (Max) | +22V, -10V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1370 pF @ 400 V |
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