SCTH90N65G2V-7
SICFET N-CH 650V 90A H2PAK-7Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics SiCFET N-Channel MOSFET, part number SCTH90N65G2V-7, is designed for high-performance power applications. This device features a 650 V drain-to-source voltage and a continuous drain current rating of 90 A at 25°C (Tc). With a maximum on-resistance of 26 mOhm at 50 A and 18 V, it offers efficient switching. The SiCFET technology enables a maximum power dissipation of 330 W (Tc). Key parameters include a gate charge of 157 nC @ 18 V and input capacitance of 3300 pF @ 400 V. The SCTH90N65G2V-7 is housed in an H2PAK-7 surface mount package, suitable for demanding thermal management. Typical applications include electric vehicle charging, industrial power supplies, and solar inverters. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 50A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 330W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | H2PAK-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -10V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 157 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3300 pF @ 400 V |
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