SCTH50N120-7
SICFET N-CH 1200V 65A H2PAK-7Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics SCTH50N120-7 is an N-Channel SiCFET designed for high-voltage, high-power applications. This component features a drain-to-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 65 A at 25°C. The device exhibits a maximum on-resistance (Rds On) of 69 mOhm at 40 A and 20 V gate-source voltage. With a power dissipation of 270 W (Tc), it is suitable for demanding environments. The SCTH50N120-7 is packaged in an H2PAK-7 (TO-263-8, D2PAK) for surface mounting and operates across a temperature range of -55°C to 175°C (TJ). Key electrical characteristics include a gate charge (Qg) of 122 nC at 20 V and input capacitance (Ciss) of 1900 pF at 400 V. This SiC FET technology enables efficient operation in power factor correction, inverters, and motor control systems across industrial, automotive, and renewable energy sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 65A |
| Rds On (Max) @ Id, Vgs | 69mOhm @ 40A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 270W (Tc) |
| Vgs(th) (Max) @ Id | 5.1V @ 1mA |
| Supplier Device Package | H2PAK-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +22V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 122 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 400 V |
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