SCTH40N120G2V7AG
SICFET N-CH 650V 33A H2PAK-7Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics SCTH40N120G2V7AG is a 650V N-Channel Silicon Carbide FET designed for high-performance applications. This device offers a continuous drain current of 33A at 25°C (Tc) and a maximum power dissipation of 250W (Tc). Key electrical specifications include a drain-source on-resistance (Rds On) of 105mOhm at 20A and 18V, an input capacitance (Ciss) of 1230pF at 800V, and a gate charge (Qg) of 63nC at 18V. The gate-source voltage (Vgs) limits are +22V and -10V, with a threshold voltage (Vgs(th)) of 5V at 1mA. Manufactured with SiCFET technology, this component supports a junction temperature range of -55°C to 175°C. The SCTH40N120G2V7AG is presented in an H2PAK-7 package, suitable for surface mounting, and is qualified to AEC-Q101 standards, making it suitable for automotive applications. The component is supplied on tape and reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 20A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | H2PAK-7 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -10V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1230 pF @ 800 V |
| Qualification | AEC-Q101 |
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