SCTH40N120G2V-7
SILICON CARBIDE POWER MOSFET 120Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics N-Channel SiCFET, part number SCTH40N120G2V-7, offers a 1200 V drain-source voltage and 36 A continuous drain current at 25°C. This device features a maximum on-resistance of 100 mOhm at 20 A and 18 V gate-source voltage. Designed for efficient power conversion, it utilizes Silicon Carbide technology for enhanced performance. The SCTH40N120G2V-7 is packaged in an H2PAK-7 surface mount configuration and operates across a temperature range of -55°C to 175°C. Its capabilities make it suitable for demanding applications in electric vehicle charging, industrial power supplies, and renewable energy systems. Input capacitance (Ciss) is rated at 1233 pF at 800 V, with a maximum gate charge (Qg) of 61 nC at 18 V. The device supports gate drive voltages up to 18 V for optimal Rds(on) performance.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 238W (Tc) |
| Vgs(th) (Max) @ Id | 4.9V @ 1mA |
| Supplier Device Package | H2PAK-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1233 pF @ 800 V |
Request a Quote
Clients Also Buy
STP80NF10
MOSFET N-CH 100V 80A TO220AB
STP19NM50N
MOSFET N-CH 500V 14A TO220AB
STL285N4F7AG
MOSFET N-CH 40V 120A POWERFLAT
