SCTH35N65G2V-7AG
SICFET N-CH 650V 45A H2PAK-7Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics SCTH35N65G2V-7AG is a 650V, 45A (Tc) N-Channel SiCFET in an H2PAK-7 surface mount package. This device offers a maximum continuous drain current of 45A at 25°C and a power dissipation of 208W (Tc). The Rds On is specified at 67mOhm maximum at 20A and 20V, with a gate drive voltage range of 18V to 20V. Key parameters include a gate charge of 73 nC at 20V and input capacitance of 1370 pF at 400V. Engineered for demanding applications, this component operates across a temperature range of -55°C to 175°C (TJ) and is qualified to AEC-Q101 standards, making it suitable for automotive applications. The device is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 67mOhm @ 20A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | H2PAK-7 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V |
| Vgs (Max) | +22V, -10V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1370 pF @ 400 V |
| Qualification | AEC-Q101 |
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