SCTH35N65G2V-7
SICFET N-CH 650V 45A H2PAK-7Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics SiCFET N-Channel power transistor, part number SCTH35N65G2V-7. This device features a 650V drain-to-source breakdown voltage and a continuous drain current rating of 45A at 25°C case temperature, with maximum power dissipation of 208W. The Rds(on) is specified at a maximum of 67mOhm at 20A, 20V. Designed for surface mount applications, it utilizes the H2PAK-7 package. Key parameters include a gate charge (Qg) of 73 nC (max) @ 20V and input capacitance (Ciss) of 1370 pF (max) @ 400V. The operating temperature range is -55°C to 175°C. This component is suitable for demanding applications in power supplies, electric vehicles, and industrial motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 67mOhm @ 20A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | H2PAK-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V |
| Vgs (Max) | +22V, -10V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1370 pF @ 400 V |
Request a Quote
Clients Also Buy
STP80NF10
MOSFET N-CH 100V 80A TO220AB
STL12N65M2
MOSFET N-CH 650V 5A POWERFLAT HV
STP270N04
MOSFET N-CH 40V 120A TO220AB
