SCTH100N65G2-7AG
SICFET N-CH 650V 95A H2PAK-7Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics SCTH100N65G2-7AG is an N-Channel SiCFET designed for high-performance applications. This surface mount device features a drain-source voltage (Vdss) of 650V and a continuous drain current (Id) of 95A at 25°C (Tc). With a low on-resistance (Rds On) of 26mOhm at 50A and 18V, it offers excellent conduction efficiency. The device boasts a high power dissipation capability of 360W (Tc) and a maximum junction temperature of 175°C, making it suitable for demanding thermal environments. Key parameters include a gate charge (Qg) of 162 nC at 18V and input capacitance (Ciss) of 3315 pF at 520V. The SCTH100N65G2-7AG is packaged in an H2PAK-7 (TO-263-8, D2PAK) and is AEC-Q101 qualified, indicating its suitability for automotive applications. It is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 95A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 50A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 5mA |
| Supplier Device Package | H2PAK-7 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | +22V, -10V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 162 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3315 pF @ 520 V |
| Qualification | AEC-Q101 |
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