SCT50N120
SICFET N-CH 1200V 65A HIP247Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics SCT50N120 is a SiCFET N-Channel power transistor featuring a 1200 V Drain-Source Voltage (Vdss) and 65 A continuous drain current (Id) at 25°C. This device offers a maximum on-resistance (Rds On) of 69 mOhm at 40 A and 20 Vgs, with a gate charge (Qg) of 122 nC at 20 V. The SCT50N120 is housed in a HiP247™ package, suitable for through-hole mounting, and supports a maximum power dissipation of 318 W (Tc). Its operating temperature range is -55°C to 200°C (TJ). This component is utilized in applications requiring high voltage and current handling, such as power factor correction, electric vehicle charging, and industrial motor drives.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Rds On (Max) @ Id, Vgs | 69mOhm @ 40A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 318W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | HiP247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 122 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 400 V |
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