SCT30N120H
SICFET N-CH 1200V 40A H2PAK-2Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 1200 V 40A (Tc) 270W (Tc) Surface Mount H2PAK-2
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 45 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 270W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Supplier Device Package | H2Pak-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 400 V |