SCT30N120
SICFET N-CH 1200V 40A HIP247Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics SiCFET N-Channel MOSFET, part number SCT30N120, offers a 1200V drain-source voltage rating and 40A continuous drain current at 25°C. This device features a typical Rds(on) of 100mOhm at 20A and 20V, with a maximum gate charge of 105 nC at 20V. The input capacitance (Ciss) is rated at 1700 pF at 400V. Designed for high-temperature operation with a junction temperature range of -55°C to 200°C, it has a maximum power dissipation of 270W (Tc). The SCT30N120 is housed in a TO-247-3 package, specifically the STMicroelectronics HiP247™ footprint, suitable for through-hole mounting. This component is utilized in applications requiring high voltage and efficient switching, such as power supplies and motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 270W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA (Typ) |
| Supplier Device Package | HiP247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 400 V |
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