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SCT30N120

SICFET N-CH 1200V 40A HIP247

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics SiCFET N-Channel MOSFET, part number SCT30N120, offers a 1200V drain-source voltage rating and 40A continuous drain current at 25°C. This device features a typical Rds(on) of 100mOhm at 20A and 20V, with a maximum gate charge of 105 nC at 20V. The input capacitance (Ciss) is rated at 1700 pF at 400V. Designed for high-temperature operation with a junction temperature range of -55°C to 200°C, it has a maximum power dissipation of 270W (Tc). The SCT30N120 is housed in a TO-247-3 package, specifically the STMicroelectronics HiP247™ footprint, suitable for through-hole mounting. This component is utilized in applications requiring high voltage and efficient switching, such as power supplies and motor control.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 200°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Rds On (Max) @ Id, Vgs100mOhm @ 20A, 20V
FET Feature-
Power Dissipation (Max)270W (Tc)
Vgs(th) (Max) @ Id2.6V @ 1mA (Typ)
Supplier Device PackageHiP247™
Drive Voltage (Max Rds On, Min Rds On)20V
Vgs (Max)+25V, -10V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs105 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds1700 pF @ 400 V

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