SCT20N120
SICFET N-CH 1200V 20A HIP247Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics SCT20N120 is a SiCFET N-Channel power transistor featuring a 1200 V drain-source voltage. This device offers a continuous drain current of 20A at 25°C (Tcase) and a maximum power dissipation of 175W (Tcase). The SCT20N120 exhibits a low on-resistance of 290mOhm maximum at 10A and 20V gate-source voltage. Key characteristics include a gate charge of 45 nC maximum at 20V and input capacitance of 650 pF maximum at 400V. The transistor operates within a temperature range of -55°C to 200°C (TJ) and is housed in a TO-247-3 / HiP247™ through-hole package. This component is suitable for demanding applications in power supply, motor drive, and industrial automation sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 10A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 175W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Supplier Device Package | HiP247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 400 V |
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