SCT10N120
SICFET N-CH 1200V 12A HIP247Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics SiC N-Channel FET, part number SCT10N120, offers a 1200V drain-source breakdown voltage with a continuous drain current capability of 12A at 25°C (Tc). This SiCFET technology provides a low on-resistance of 690mOhm at 6A and 20V Vgs. Key parameters include a gate charge of 22 nC (max) at 20V and input capacitance of 290 pF (max) at 400V. The device is housed in a TO-247-3 / HiP247™ package for through-hole mounting and supports a wide operating temperature range of -55°C to 200°C (TJ). Designed for high-power applications, this component is utilized in power factor correction, industrial power supplies, and electric vehicle charging infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 690mOhm @ 6A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | HiP247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 400 V |
Request a Quote
Clients Also Buy
STP80NF10
MOSFET N-CH 100V 80A TO220AB
STP7LN80K5
MOSFET N-CH 800V 5A TO220
STP19NM50N
MOSFET N-CH 500V 14A TO220AB
