SCT1000N170
HIP247 IN LINEManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics SCT1000N170 is a SiCFET N-Channel power MOSFET featuring a drain-source voltage (Vdss) of 1700 V and a continuous drain current (Id) of 7A at 25°C. This through-hole device utilizes the HiP247™ package and offers a maximum on-resistance (Rds On) of 1.3 Ohm at 3A and 20V Vgs. Key parameters include a maximum gate charge (Qg) of 13.3 nC at 20V and input capacitance (Ciss) of 133 pF at 1000V. The operating temperature range is -55°C to 200°C (TJ). This component is suitable for applications in power factor correction, server power supplies, and industrial motor drives.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 3A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 96W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Supplier Device Package | HiP247™ |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +22V, -10V |
| Drain to Source Voltage (Vdss) | 1700 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.3 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 133 pF @ 1000 V |
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