SCT070W120G3-4AG
TO247-4Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics N-Channel Silicon Carbide (SiC) MOSFET, part number SCT070W120G3-4AG, offers exceptional performance for demanding applications. This device features a 1200V drain-source voltage and a continuous drain current of 30A at 25°C. With a maximum power dissipation of 236W (Tc) and a low on-resistance of 87mOhm at 15A and 18V, it is engineered for efficient power conversion. The TO-247-4 package facilitates through-hole mounting. Key parameters include gate charge of 41 nC at 18V and input capacitance of 900 pF at 850V. The SCT070W120G3-4AG is AEC-Q101 qualified, making it suitable for automotive and industrial power systems. Operating temperature range is -55°C to 200°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 87mOhm @ 15A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 236W (Tc) |
| Vgs(th) (Max) @ Id | 4.2V @ 1mA |
| Supplier Device Package | TO-247-4 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Vgs (Max) | +18V, -5V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 850 V |
| Qualification | AEC-Q101 |
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